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  data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 1 general description the ap2805 is an integrated high-side power switch that consists of n-channel mosfet, charge pump, over current & temperature and other related protection circuits. the switch? s low rds (on), 60m ? , design easily to meet usb voltage drop requirements. it includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remain off unless there is a valid input voltage present. a flag output is available to indicate fault conditions to the local usb controller. the ap2805 is available in standard packages of soic-8 and msop-8. features ? low mosfet on resistance: 60m ? @v in =5.0v ? compliant to usb specifications ? operating voltage range: 2.7v to 5.5v ? low supply current: 60a (typ.) ? low shutdown current: 1.0a (max) ? guarantee 0.5a continuous load ? current limit: 0.7a (min), 1.4a (max) ? under-voltage lockout ? logic level enable pin: available in active-high or active-low version ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? deglitched flag output with open drain ? with output shutdown pull-low resistor for a/c versions ? ul approved (file no. e339337) ? nemko cb scheme iec60950-1, ref. certif no. no67288 applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebooks, motherboard pcs figure 1. package types of ap2805 soic-8 msop-8
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 2 pin configuration m/mm package soic-8/msop-8 figure 2. pin configurat ion of ap2805 (top view) pin descriptions pin number pin name function 1 gnd ground 2, 3 vin supply input pin 4 chip enable control input, active low or high 5 fault flag pin, output with open drain, need a pull-up resistor in application, acti ve low to indicate ocp or otp 6, 7, 8 vout switch output voltage
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2805
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 4 ordering information ap2805 - circuit type product package condition temperature range part number marking id packing type green green ap2805a soic-8 active high with auto discharge -40 to 85 c ap2805am-g1 2805am-g1 tube ap2805amtr-g1 2805am-g1 tape & reel msop-8 ap2805amm-g1 2805amm-g1 tube ap2805ammtr-g1 2805amm-g1 tape & reel ap2805b soic-8 active high without auto discharge -40 to 85 c ap2805bm-g1 2805bm-g1 tube ap2805bmtr-g1 2805bm-g1 tape & reel msop-8 ap2805bmm-g1 2805bmm-g1 tube ap2805bmmtr-g1 2805bmm-g1 tape & reel ap2805c soic-8 active low with auto discharge -40 to 85 c ap2805cm-g1 2805cm-g1 tube ap2805cmtr-g1 2805cm-g1 tape & reel msop-8 ap2805cmm-g1 2805cmm-g1 tube AP2805CMMTR-G1 2805cmm-g1 tape & reel ap2805d soic-8 active low without auto discharge -40 to 85 c ap2805dm-g1 2805dm-g1 tube ap2805dmtr-g1 2805dm-g1 tape & reel msop-8 ap2805dmm-g1 2805dmm-g1 tube ap2805dmmtr-g1 2805dmm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. package m: soic-8 mm: msop-8 condition a: active high w ith auto discharge b: active high without auto discharge c: active low with auto discharge d: active low without auto discharge g1: green tr: tape & reel blank: tube
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 sec) t lead 260 oc thermal resistance (junction to ambient) ja soic-8 135 o c / w msop-8 150 esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v operating ambient temperature range t a -40 85 c
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 6 electrical characteristics (v in =5.0v, c in =2.2f, c out =1.0f, typical t a =25c, unless otherwise specified) parameter symbol conditions min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5.0v, i out =0.5a 60 80 m ? current limit i limit v out =4.0v 0.7 1.0 1.4 a supply current i supply v in =5.0v, no load 60 80 a fold-back short current i short v out =0v 0.7 a shutdown supply current i shutdown chip disable, shutdown mode 0.1 1 a enable high input threshold v enh 1.6 5.5 v enable low input threshold v enl 0 1.0 v enable pin input current i en force 0v to 5.0v at en pin -1.0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out >v in 0.1 1.0 a output pull low resistance after shutdown r discharge ap2805a, ap2805c only 100 200 ? output turn-on time t on from enable active to 90% o f output 500 s flag delay time t dflg from fault condition to flag active 5 10 15 ms flag low voltage v flg i sink =5.0ma 35 70 mv flag leakage current i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 o c thermal shutdown hysteresis t hyotsd 30 o c
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 7 typical performance characteristics figure 4. supply current vs. ambient temperature figure 5. supply current vs. supply voltage figure 6. current limit vs. supply voltage figure 7. current limit vs. ambient temperature -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 v in =5v enable active no load supply current ( a) ambient temperature ( o c) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -10 0 10 20 30 40 50 60 70 80 90 100 t a =-40 o c t a = 25 o c t a = 85 o c enable active supply current ( a) supply voltage (v) -40-20 0 20406080 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v in =3.3v v in =5v enable active current limit (a) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t a =25 o c enable active current limit (a) supply voltage (v)
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) figure 8. output short current vs. figure 9. output short current vs. input voltage ambient temperature figure 10. shutdown current vs. ambient temperature figure 11. reve rse current vs. ambient temperature 3.0 3.5 4.0 4.5 5.0 5.5 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 t a =25 o c enable active output short current (a) input voltage (v) -40 -20 0 20 40 60 80 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v in =5v enable active output short current (a) ambient temperature ( o c) -40-200 20406080 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 v in =5v disable active shutdown current ( a) ambient temperature ( o c) -40-200 20406080 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 v in =3.5v v out =4.5v disable active reverse current ( a) ambient temperature ( o c)
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 9 typical performance characteristics (continued) figure 12. switch on resistance vs. figure 13. switch on resistance vs. ambient temperature supply voltage figure 14. under voltage lockout threshold voltage figure 15. flag delay time during over current vs. ambient temperature vs. ambient temperature -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 i out =0.5a v in =5v enable active switch on resistance (m ) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 30 40 50 60 70 80 90 100 switch on resistance (m ) supply voltage (v) t a =25 o c i out =0.5a enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 v in falling ambient temperature ( o c) enable active v in rising under voltage lockout threshold voltage (v) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 5 6 7 8 9 10 11 12 13 14 15 v in =5v enable active flag delay time during over current (ms) ambient temperature ( o c)
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 16. flag delay time during over current figure 17. enable threshold voltage vs. supply voltage vs. ambient temperature time(500s/div) figure 18. enable threshold voltage figure 19. output turn on and rise time vs. supply voltage (c in =1.0 f,c out =1.0 f,no load) v en (5v/div) i inrush (20ma/div) v out (1v/div) 3.0 3.5 4.0 4.5 5.0 5.5 6 8 10 12 14 supply voltage (v) t a =25 o c v in =5v enable active flag delay time during over current (ms) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v enh v enl ambient temperature ( o c) v in =5v enable threshold voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 supply voltage (v) v enh v enl t a =25 o c enable threshold voltage (v)
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) time(500s/div) time(500s/div) figure 20. output turn on and rise time figure 21. output turn on and rise time (c in =1.0 f, c out =1.0 f, r l =6.6 ? ) (c in =1.0 f, c out =47 f,no load) time(5ms/div) time(5ms/div) figure 22. output turn off and falling time figure 23. output turn off and falling time (v in =5v,c in =1.0 f,no load) (v in =5v,c in =1.0 f, c out =470 f, r l =6.6 ? ) v en (5v/div) i inrush (500ma/ div) v out (1v/div) v en (5v/div) i inrush (1a/div) v out (1v/div) v en (5v/div) v out (1v/div) i out (1a/div) v en (5v/div) v out (1v/div) c out =1 f c out =22 f c out =220 f c out =470 f c out =100 f
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) time(100ms/div) time(5ms/div) figure 24. output short to gnd current figure 25. flag response during over current (v in =5v,c in =1.0 f) (v in =5v,c in =1.0 f, c out =470 f) time(5ms/div) figure 26. flag response during over temperature (v in =5v,c in =1.0 f, c out =220 f, r l =6.6 ? ) v en (5v/div) v out (1v/div) i out (1a/div) v flag (1v/div) v out (1v/div) i out (1a/div) v flag (1v/div) v out (1v/div) i out (1a/div)
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 13 typical application note 2: 2.2f input capacitor is enough in most application cases. if the vout is short to ground frequently during us age, large size input capacitor is necessary, recommend 22f. figure 27. typical application of ap2805
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 14 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
data sheet 500ma high-side power distribution switch with enable and flag ap2805 aug. 2012 rev 1. 0 bcd semiconductor manufacturing limited 15 mechanical dimensions (continued) msop-8 unit: mm(inch) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited


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